The principle of operation and the use of bipolar transistor
In this work, physical processes are considered that determine the work of a bipolar transistor with a wide -zone emitter (BTG) in a wide frequency range. The BTG model is proposed, which allows the calculation of the static and dynamic parameters of the transistor, depending on the parameters of the structure of the hetero -transition and the mode of operation. It is shown that the parameters and characteristics of the BTG are largely determined by the law of the distribution of impurities in the area of the volumetric charge of the hetero transition.
In recent years, interest in the use of the hetero transitions to improve the properties of a bipolar transistor when it work at large inject levels has been strengthened again. In addition, a bipolar transistor with a hetero transition (BTG) is a promising device for both discrete microwave electronics and integral circuits. Currently, according to foreign press, BTG experimental samples with a boundary frequency of more than 75 GHz and with a maximum generation frequency of 50 GHz have theoretically predicted the possibility of obtaining maximum frequencies up to 150 GHz.
Such record results were achieved on heterotransistors based on Alxga-XASGAAS compounds, the manufacturing technology of which, based on various methods of epitaxia, is well developed. This allows you to get the hetero transitions in which there are practically no conditions at the section border. The BTG power diagram based on AlxGai/Mifare is given.