Development of BTG manufacturing technology
The transistor has an ALXGAXAS wide -zone emitter, GaAS RTPA base and a bird’s manner from GaAS. Due to the difference in potential barriers to electrons and holes (AE2Aej), the inject of the wide -spaced. Energy diagram Bipolar Ral CT) will be much closer to one than in an ordinary emitter (designations generally accepted). Note that in the appropriate expression for the homesproke there is no exponential multiplier. Along with injecting from the broad -spaced emitter, the work of BTG in a wide frequency range determines the following main physical processes of the media transfer through the base and the collector transition, generation and recombination. All these processes are largely determined by the electrophysical parameters of the initial heterostructure of the multilayer structure, grown by the method of epitaxia in a single technological process. Therefore, when developing BTG manufacturing technology, especially serial, a model is extremely necessary to predict BTG parameters depending on the real values of the electrophysical parameters of the material.