The concept and stages of the hetero transition in the bipolar transistor
In the hetero transitions, the process of alignment of concentration is delayed, since with displacements close to the complete removal of the contact difference in potentials. The walls in the AE1 conductivity zone and the AE2 valence zone, which prevent the movement of the charge carriers. It follows that the coefficient of injecting of the hetero -transition should depend on the current of direct displacement than a similar dependence in the homes. The use of a hetero -transition in a bipolar transistor also allows to significantly reduce the base resistance, since the base can be very alloyed without reducing the effectiveness of the emitter. In addition, this can significantly reduce the effect of impressing the emitter current to the edges of the transition due to a small voltage drop along the transition of the emitter-base. Along with this, the pulsed properties of the bipolar transistor are improved due to a high reinforcement coefficient and low base resistance. And finally, the use of a hetero -transition in a bipolar transistor allows you to expand the range of operating temperatures.