The results of the analysis of the characteristics and parameters of BTG
The parameters and characteristics of the BTG are largely determined by the law of the distribution of impurities in the area of the volumetric charge of the hetero transition. The implementation of the model is made on IBM PC PC PC. The results of the calculations are compared with experimental data. At the same time, an electric field arises in the base of the transistor, which does not disappear at high levels of injection. Modern methods of molecular -beam epitaxia allow you to grow layers with a changing composition along the structure. The hypothetical model of such a transistor with a wide -zone emitter is shown. For example, when using ALXGAIXAS with a triple compound by changing the parameter of the composition of X within 00.4, the width of the prohibited ALXGA zone. XAS linearly increases from 1.42 to 1.92 EV. Then, with the thickness of the varisone base, about 0.10.5 μm and the composition of the composition X 0.3, the difference in the width of the prohibited zone will be approximately 0.3 EV, and the electric field intensity in the database will be a square. The results of the analysis of the characteristics and parameters of the BTG with the varisone structure of the base will be published later.