Features of the theory of bipolar transistor
The work conducted an analysis of the characteristics of the BTG based on a one -dimensional model, taking into account the influence of diffusion profiles, the law of changing the fraction of aluminum in Algaas and the voltage of the electric field on the mobility of carriers. The proposed model allows the calculation of the static and dynamic parameters of the transistor, taking into account the contact resistances and parameters of the external circuit. As a result of multiple modeling, the transitions of the transitions, collector characteristics, maximum frequency, reinforcement coefficient by the current and time of switching the transistor, depending on the parameters of the hetero -transition and the operating mode of operation, were obtained. From the theory of the bipolar transistor, it is known that, with large direct currents in the homesprokes, the inecration coefficient is reduced due to the alignment of the concentration of charge carriers on both sides of the section of the section PN transition.